High-temperature deformation of forsterite single crystals doped with vanadium

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Authors:Mackwell, S. J.; Kohlstedt, D. L.
Author Affiliations:Primary:
Cornell Univ. Ithaca, Dep. Material. Sci. Engineer., Ithaca, NY 14853, United States
Volume Title:Physics and Chemistry of Minerals
Source:Physics and Chemistry of Minerals, 13(5), p.351-356. Publisher: Springer-Verlag, Berlin-New York, Federal Republic of Germany. ISSN: 0342-1791
Publication Date:1986
Note:In English. 25 refs.; illus. incl. 3 tables
Summary:Creep experiments were performed on samples of a single-crystal of V-doped forsterite under controlled p/O2 conditions to investigate the effects of the addition of substitutional defects in the tetrahedral lattice sites. Addition of V causes marked changes in the flow behaviour of the forsterite, with a net increase in the creep rate at high pO2 and a new p/O2-dependent flow regime at low p/O2 conditions. These observations can be interpreted as resulting from changes in the majority defect species that maintain the charge neutrality within the crystal. A climb-controlled dislocation creep model for the high-T deformation of V-doped forsterite is proposed in which either: 1) movement of uncharged jogs is rate-limited by the diffusion of Si via a vacancy mechanism, or 2) movement of positively charged jogs is rate- limited by diffusion of oxygen via a vacancy mechanism. [P.Br.]
Subjects:Creep; Experimental studies; Forsterite; Geochemistry; Metals; Minerals; Nesosilicates; Olivine group; Orthosilicates; Silicates; Vanadium; Nesosilicates, olivine group
Abstract Numbers:87M/0734
Record ID:1988021488
Copyright Information:GeoRef, Copyright 2019 American Geosciences Institute. Reference includes data from Mineralogical Abstracts, United Kingdom, Twickenham, United Kingdom, Reference includes data from Geoline, Bundesanstalt fur Geowissenschaften und Rohstoffe
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